Название: Junctionless Field-Effect Transistors: Design, Modeling, and Simulation (IEEE Press Series on Microelectronic Systems)
Автор: Shubham Sahay, Mamidala Jagadesh Kumar
Издательство: Wiley-IEEE Press
Год: 2019
Формат: True PDF
Страниц: 491
Размер: 11.1 Mb
Язык: English
A comprehensive one-volume reference on current JLFET methods, techniques, and research
Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.