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Название: MOS Interface Physics, Process and Characterization
Автор: Shengkai Wang and Xiaolei Wang
Издательство: CRC Press
Год: 2022
Страниц: 174
Размер: 15,73 МБ
Формат: PDF
Язык: English
The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit, and is therefore a fundamental building block of the information society. Indeed, high quality MOS structure is the key to achieving high performance devices and integrated circuits. Meanwhile, the control of interface physics, process and characterization methods determine the quality of MOS structure.