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Название: SiC Power Module Design: Performance, robustness and reliability
Автор: Edited by Alberto Castellazzi and Andrea Irace
Издательство: The Institution of Engineering and Technology
Год: 2022
Формат: PDF
Страниц: 352
Размер: 19,44 MB
Язык: English
High-frequency switching power semiconductor devices are at the heart of power electronic converters. To date, these devices have been dominated by the well-established silicon (Si) technology. However, their intrinsic physical limits are becoming a barrier to achieving higher performance power conversion.