Название: Microwave Field-Effect Transistors: Theory, Design, and Applications
Автор: Raymond S. Pengelly
Издательство: Noble Publishing
Год: 1994
Формат: PDF
Страниц: 705
Размер: 23,79 МБ
Язык: English

This book covers the use of devices in microwave circuits and includes such topics as semiconductor theory and transistor performance, CAD considerations, intermodulation, noise figure, signal handling, S-parameter mapping, narrow- and broadband techniques, packaging and thermal considerations. Perhaps the most comprehensive text on GaAs FET technology and its practical application. It covers the use of MESFET devices in microwave circuits, such as low-noise amplifiers, mixers, oscillators, power amplifiers, switches and multipliers. This text is a classic reference for all engineers involved in the development of solid state microwave devices.