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Автор: John E. Ayers and Tedi Kujofsa
Издательство: CRC Press
Год: 2016
Формат: PDF
Размер: 12 Мб
Язык: английский / English
In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices.