- Добавил: harun54
- Дата: 20-08-2021, 10:24
- Комментариев: 0
Название: Technology Computer Aided Design: Simulation for VLSI MOSFET
Автор: Chandan Kumar Sarkar
Издательство: CRC Press
Год: 2017
Формат: PDF
Размер: 34 Мб
Язык: английский / English
Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software.
Автор: Chandan Kumar Sarkar
Издательство: CRC Press
Год: 2017
Формат: PDF
Размер: 34 Мб
Язык: английский / English
Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software.