Название: Advanced MOS Devices and their Circuit Applications
Автор: Ankur Beohar, Ribu Mathew, Abhishek Kumar Upadhyay
Издательство: CRC Press
Год: 2024
Страниц: 161
Язык: английский
Формат: pdf (true)
Размер: 28.7 MB

This text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will be investigated in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach.

The book:

Discusses advanced MOS devices and their circuit design for energy- efficient systems on chips (SoCs)
Covers MOS devices, materials, and related semiconductor transistor technologies for the next-generation ultra-low-power applications
Examines the use of field-effect transistors for biosensing circuit applications and covers reliability design considerations and compact modeling of advanced low-power MOS transistors
Includes research problem statements with specifications and commercially available industry data in the appendix
Presents Verilog-A model-based simulations for circuit analysis

The field of metal oxide semiconductor (MOS) technology has experienced remarkable advancements in recent years, revolutionizing the electronics industry and enabling the development of smaller, more efficient devices. It is with great pleasure that we present this comprehensive book, Advanced MOS Devices and Their Circuit Applications, which delves into the intriguing realm of MOS device physics and explores its implications for circuit design.

This book serves as a valuable resource for semiconductor engineers, researchers, and students seeking a deeper understanding of MOS technology development. We have taken a unique approach, emphasizing the physical description, modeling, and technological implications of MOS devices, rather than focusing solely on formal aspects of device theory. By doing so, we aim to provide practical insights that can be readily applied in the real-world challenges faced by industry professional.

In this book, we dedicate significant attention to the critical issue of hot-carrier effects, investigating the engineering aspects of this problem and its impact on MOS devices. Additionally, we explore emerging low-temperature MOS technology, a rapidly evolving area that holds great promise for future advancements. Furthermore, we address the challenge of latch-up in scaled MOS circuits, shedding light on this complex phenomenon and its implications for circuit reliability.

The volume provides detailed discussions of DC and analog/RF characteristics, effects of trap-assisted tunneling (TAT) for reliability analysis, spacer-underlap engineering methodology, doping profile analysis, and work-function techniques. It further covers novel MOS devices including FinFET, Graphene field-effect transistor, Tunnel FETS, and Flash memory devices. It will serve as an ideal design book for senior undergraduate students, graduate students, and academic researchers in the fields including electrical engineering, electronics and communication engineering, computer engineering, materials science, nanoscience, and nanotechnology.




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