Название: Tunneling Field Effect Transistors: Design, Modeling and Applications
Автор: T.S. Arun Samuel, Young Suh Song, Shubham Tayal, P. Vimala
Издательство: CRC Press
Год: 2023
Страниц: 317
Язык: английский
Формат: pdf (true)
Размер: 36.7 MB

This book will give insight into emerging semiconductor devices from their applications in electronic circuits, which form the backbone of electronic equipment. It provides desired exposure to the ever-growing field of low-power electronic devices and their applications in nanoscale devices, memory design, and biosensing applications.

Tunneling Field Effect Transistors: Design, Modeling and Applications brings researchers and engineers from various disciplines of the VLSI domain to together tackle the emerging challenges in the field of nanoelectronics and applications of advanced low-power devices. The book begins by discussing the challenges of conventional CMOS technology from the perspective of low-power applications, and it also reviews the basic science and developments of subthreshold swing technology and recent advancements in the field. The authors discuss the impact of semiconductor materials and architecture designs on TFET devices and the performance and usage of FET devices in various domains such as nanoelectronics, Memory Devices, and biosensing applications. They also cover a variety of FET devices, such as MOSFETs and TFETs, with various structures based on the tunneling transport phenomenon.

The contents of the book have been designed and arranged in such a way that Electrical Engineering students, researchers in the field of nanodevices and device-circuit codesign, as well as industry professionals working in the domain of semiconductor devices, will find the material useful and easy to follow.




ОТСУТСТВУЕТ ССЫЛКА/ НЕ РАБОЧАЯ ССЫЛКА ЕСТЬ РЕШЕНИЕ, ПИШИМ СЮДА!