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Non-Volatile CBRAM/MIM Switching Technology for Electronically Reconfigurable Passive Microwave Devices

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  • Дата: 26-02-2023, 19:12
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Non-Volatile CBRAM/MIM Switching Technology for Electronically Reconfigurable Passive Microwave DevicesНазвание: Non-Volatile CBRAM/MIM Switching Technology for Electronically Reconfigurable Passive Microwave Devices
Автор: Jayakrishnan M. Purushothama, Etienne Perret, Arnaud Vena
Издательство: Wiley-ISTE
Год: 2022
Страниц: 208
Язык: английский
Формат: pdf (true), epub (true)
Размер: 35.3 MB

This book presents the applications of non-volatile CBRAM/MIM switching technology for electronically reconfigurable passive RF and microwave devices, together with theory and methods for application in rewritable chipless RFID tags. Conductive Bridging Random Access Memory (CBRAM) is a renowned and commercially used non-volatile memory concept. Having evolved over the past few decades, it is currently identified as an efficient non-volatile RF switching technology.

This book presents recent research on this topic, focusing on the development of a new generation of low-cost non-volatile RF switches and their applications, demonstrating both high performance and flexibility of implementation. It includes the experimental realization of various prototypes of RF and microwave devices utilizing this technology, along with relevant analysis of mathematical and electrical models, and detailed discussions of future aspects. All devices presented are compatible with mass industrial production at an economically efficient budget through optimized fabrication steps, without the requirement of sophisticated “clean room” processes among them.

Today’s technological solutions for RF switching (solid-state semiconductor switches and RF micro-electromechanical-systems [MEMS]) need some improvements to meet the emerging requirements, in which the most desired innovation is non-volatile operation, i.e. operating without any energy requirements for maintaining an impedance state. Such a broadband solution, based on a flexible and low cost approach, is eagerly awaited.

Conductive bridging random access memory/metal insulator metal (CBRAM/MIM) switches are a new innovation of memory technology, which has also been identified as a potential non-volatile RF switching solution in the recent years. The primary target of this book, and the core concept of the studies presented herewith, is to introduce the idea of a new generation of electronically reconfigurable, solid-state and passive RF-microwave devices based on integrated CBRAM/MIM switching technology. We will present our work and results, focusing on the development of a new technology of low-cost non-volatile RF switches with both high performance and flexibility of implementation.

We demonstrate the basic principle of CBRAM/MIM RF switches and give proof of concept realizations of integration of this technology into passive RF and microwave devices, such as electronically rewritable chipless RFID tags, which are often referred to as the “rewritable RF barcodes of the future”, electronically pattern steerable antennas, electronically reconfigurable filters and single pole double throw (SPDT) switches on classic as well as flexible substrates. The necessary analysis and theoretical validations of these concepts are also presented with these results.

Contents:
Preface
1 Motivation and Background: RF Switches and the Need for a Non-Volatile RF Switch
2 Real-World Implementation Challenges of a Low-Cost Non-Volatile RF Switch
3 Solid-State Rewritable Chipless RFID Tags: Electronically Rewritable RF Barcodes
4 Fully Passive Solid-State Electronically Reconfigurable Filter and Antenna Models
Conclusion
Appendix
References
Index

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