Название: Advanced SPICE Model for GaN HEMTs (ASM-HEMT): A New Industry-Standard Compact Model for GaN-based Power and RF Circuit Design
Автор: Sourabh Khandelwal
Издательство: Springer
Год: 2022
Страниц: 194
Язык: английский
Формат: pdf (true), epub
Размер: 47.3 MB

This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools.

Transistors are ubiquitous circuit elements. They are deployed in electronics circuits used in applications ranging from microprocessors to cell phones to power distribution electronics. These applications deploy transistors as a switch and also as signal amplifying device. As an electronic switch, the transistor should ideally provide no resistance when turned on and an infinite resistance when turned off. In reality, any transistor made from a semiconducting material will always have a finite resistance. This is due to the limited amount of charge in the channel and the finite speed of carriers flowing in the channel. Similarly, in off state the resistance of a realistic device will not be infinite but finite value due to the different leakage mechanisms in the device. As an amplifying device, the nature of the output characteristics of transistors is used to provide amplification of a small signal. Transistors with a large input-to-output transfer or the trans-conductance are used to amplify the input signal. The ability to amplify the signals again depends on the semiconductor material properties.

Silicon-based transistors have revolutionized the world of electronic gadgets for decades now. The relentless progress in silicon-based transistor performance, as dictated by Moore’s law, has led to products unimaginable without the progress in silicon transistor technology. Moore’s law and this progression are slowing down and coming to an end now. Additionally, for applications concerned with high power, high frequency, and high voltage handling capabilities, silicon has material limitations. Wide band-gap semiconductors such as GaN and SiC offer significant advantages in these applications. In the Chapter 1, we discuss what makes a good transistor for power amplifier and switching application. Our focus here is on two different types of applications: 1) signal power amplification at radio frequencies and 2) high speed, high voltage switching used in power electronics. These two applications are chosen to show the reader how the properties of GaN-based transistors suit the needs to these two differing applications quite well. This also provides a view to the reader that while seemingly different, these applications have quite a bit common when comes to transistor technology suited for these applications. For these applications, we look at some key relations that define performance and efficiency. A discussion is on how change in transistor size causes different trade-offs in performance and efficiency metrics.

Describes in detail a new industry standard for GaN-based power and RF circuit design;
Includes discussion of practical problems and their solutions in GaN device modeling;
Covers both radio-frequency (RF) and power electronics application of GaN technology;
Describes modeling of both GaN RF and power devices.




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