Название: Technology Computer Aided Design: Simulation for VLSI MOSFET
Автор: Chandan Kumar Sarkar
Издательство: CRC Press
Год: 2017
Формат: PDF
Размер: 34 Мб
Язык: английский / English

Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software.

Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents concepts in a simplified manner, frequently using comparisons to everyday-life experiences. The book then explains concepts in depth, with required mathematics and program code. This book also details the classical semiconductor physics for understanding the principle of operations for VLSI MOS transistors, illustrates recent developments in the area of MOSFET and other electronic devices, and analyzes the evolution of the role of modeling and simulation of MOSFET. It also provides exposure to the two most commercially popular TCAD simulation tools Silvaco and Sentaurus.



ОТСУТСТВУЕТ ССЫЛКА/ НЕ РАБОЧАЯ ССЫЛКА ЕСТЬ РЕШЕНИЕ, ПИШИМ СЮДА!