Название: Advances in Non-volatile Memory and Storage Technology, 2nd Edition
Автор: Blanka Magyari-Kope, Yoshio Nishi
Издательство: Woodhead Publishing
Год: 2019
Страниц: 645
Язык: английский
Формат: pdf (true)
Размер: 17.6 MB

Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included.

In today’s computational systems, memories are categorized into volatile memory and nonvolatile memory (NVM) technologies. Due to the ever increasing demand for more memory capacity, planar NAND Flash has been scaled down to below 20-nm feature size. Concomitantly, three-dimensional (3D) vertical NAND Flash has been developed as a Bit-Cost-Scalable (BiCS) solution and allows today entering the Terabyte era. As a result, the NVM market is by far dominated by NAND Flash technology, and the forecast is that the future of NAND will be NAND.

In the volatile memory category, the main technologies are the static RAM (SRAM) and dynamic RAM (DRAM), which are higher-speed and higher-performance technologies, however, exhibit poor scalability. Their role in a central process unit (CPU) is to store data that require immediate access while NAND Flash or hard-disk drive (HDD) store information that is not required immediately but for available future usage.

This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices.

Key Features:
Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories
Provides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknesses
Examines improvements to flash technology, charge trapping and resistive random access memory