Название: Vertical GaN and SiC Power Devices
Автор: Kazuhiro Mochizuki
Издательство: Artech House
Год: 2018
Формат: PDF
Размер: 2 Мб
Язык: английский / English

This unique new resource provides a comparative introduction to vertical Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices using real commercial device data, computer, and physical models. This book uses commercial examples from recent years and presents the design features of various GaN and SiC power components and devices. Vertical verses lateral power semiconductor devices are explored, including those based on wide bandgap materials. The abstract concepts of solid state physics as they relate to solid state devices are explained with particular emphasis on power solid state devices.